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Stability Studies on A-Si:H Films

Published online by Cambridge University Press:  25 February 2011

Vikram L. Dalal  and
Camille Fuleihan
Vikram L. Dalal
Affiliation:
Iowa State University, Ames, Iowa 50011
Camille Fuleihan
Affiliation:
Optron Systems, Bedford, Massachusetts 01730
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Abstract

We report on kinetics of photo-induced degradation in a-Si:H films and devices. We find that in device-quality films, the degradation kinetics do not follow either the time or the intensity behavior predicted by the bondbreaking model. Instead, there is a strong tendency towards saturation, as predicted by Redfield's equilibration model. We also find that increased SiH2 bonding in the film leads to increased degradation. The initial degradation kinetics follow the intensity behavior predicted by the trap-todangling bond conversion model of Adler. Trace levels of impurities such as O and P significantly increase the initial degradation, also in accord with the predictions of the trap conversion model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 601
Copyright
Copyright © Materials Research Society 1989

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References

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