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Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

Published online by Cambridge University Press:  21 February 2011

E. Kolawa ,
C. W. Nieh ,
W. Flick ,
J. Molarius  and
M-A. Nicolet
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
C. W. Nieh
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
W. Flick
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
J. Molarius
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125; J.L. Tandon, J.H. Madok, McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647; F.C.T. So, Optoelectronics Division, Hewlett-Packard Co., San Jose, CA 95131
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Abstract

Contacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 289
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Braslau, N., Gunn, J.B. and Staples, J.L., Solid State Electron., 10, 38 (1967).Google Scholar
2. Kuan, T.S., Batson, P.E., Jackson, T.N., Rupprecht, H. and Wilkie, E.L., J. Appl. Phys. 54, 6952 (1983).Google Scholar
3. Braslau, N. in Interfaces and Contacts, MRS Symposium Proceedings, Ludeke, R. and Rose, K. eds. (North Holland, New York, 1982), p.393.Google Scholar
4. Marshall, E.D., Chen, W.X., Wu, C.S., Lau, S.S. and Kuech, T.F., Appl. Phys. Lett. 47, 298 (1985).Google Scholar
5. Marshall, E.D., Zhang, B., Wang, L.C., Jiao, P.E., Chen, W.X., Sawada, T., Kavanagh, K.L., Kuech, T.F., J. Appl. Phys. 62, 942 (1987).Google Scholar
6. Sinha, A.K., Smith, T.E. and Levinstein, H.J., IEEE Trans. Electron Devices 22 218 (1975).CrossRefGoogle Scholar
7. Katt-elus, H.P., Tandon, J.L., Hamdi, A. H. and Nicolet, M-A. in Mat. Res. Soc. Symp. Proc. Vol.37, 589 (1985).Google Scholar
8. Tandon, J.L., Douglas, K.D., Vendura, G., Kolawa, E., So, F.C.T. and Nicolet, M-A. in Proc. Workshop on Tungtsen and Other Refractroy Metals for VLSI Applications, Blewer, R.S. ed. (MRS, Pittsburgh, 1986) p. 331.Google Scholar
9. So, F.C.T., Kolawa, E., Tandon, J.L. and Nicolet, M-A., J. Electrochem. Soc. 134, 1755 (1987).Google Scholar
10. Kattelus, H.P., Kolawa, E., Affolter, K. and Nicolet, M-A., J. Vac. Sci. Technol. A3, 2246 (1985).Google Scholar
11. Kolawa, E., So, F.C.T., Chao, X-A and Nicolet, M-A. in Proc. Workshop on Tungsten and Other Refractory Metals for VLSI Application II, Broadbent, E.K. ed. (MRS, Pittsburgh, 1987) p. 311.Google Scholar
12. Berger, H.H., Solid-State Electron. 15 145 (1972).Google Scholar
13. Kolawa, E., So, F.C.T., Tandon, J.L. anid Nicolet, M-A., J. ELectrochem. Soc. 134, 1759 (1987).Google Scholar