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Stacked Boron Doped Poly-Crystalline Silicon-Germanium Layers: an Excellent MEMS Structural Material

Published online by Cambridge University Press:  01 February 2011

Gert Claes ,
Gregory Van Barel ,
Rita Van Hoof ,
Bert Du Bois ,
Maria Gromova ,
Agnes Verbist ,
Tom Van der Donck ,
Stefaan Decoutere ,
Jean-Pierre Celis  and
Ann Witvrouw
Gert Claes
Affiliation:
gert.claes@imec.be, IMEC / K.U.Leuven, CMOSDR/CTI, Kapeldreef 75, Leuven, N/A, Belgium
Gregory Van Barel
Affiliation:
vbarel@imec.be, IMEC, Leuven, N/A, Belgium
Rita Van Hoof
Affiliation:
vanhoofr@imec.be, IMEC, Leuven, N/A, Belgium
Bert Du Bois
Affiliation:
duboisb@imec.be, IMEC, Leuven, N/A, Belgium
Maria Gromova
Affiliation:
gromova@imec.be, IMEC, Leuven, N/A, Belgium
Agnes Verbist
Affiliation:
verbist@imec.be, IMEC, Leuven, N/A, Belgium
Tom Van der Donck
Affiliation:
Tom.VanDerDonck@mtm.kuleuven.be, K.U.Leuven, Metallurgy and Materials Engineering, Leuven, N/A, Belgium
Stefaan Decoutere
Affiliation:
decouter@imec.be, IMEC, Leuven, N/A, Belgium
Jean-Pierre Celis
Affiliation:
Jean-Pierre.Celis@mtm.kuleuven.be, K.U.Leuven, Metallurgy and Materials Engineering, Leuven, N/A, Belgium
Ann Witvrouw
Affiliation:
witvrouw@imec.be, IMEC, Leuven, N/A, Belgium
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Abstract

In this work stacked boron doped poly-crystalline Silicon-Germanium (poly-SiGe) layers, which can be applied as structural MEMS layers, were studied. A standard 1 µm base layer, deposited at 480 ºC chuck temperature, is stacked until the required thickness (e.g. 10 x for a 10 µm thick layer). This 1 µm base layer consists of a PECVD seed layer (+/− 75 nm), a CVD crystallization layer (+/− 135 nm) and a PECVD layer to achieve the required thickness with a high growth-rate. The top part of this PECVD layer can optionally be used for optimizing the stress gradient by a stress compensation layer. This approach resulted in 4 µm thick poly-SiGe MEMS structural layers with low tensile stress (50 MPa), low resistivity (2 mΩcm) and a low strain gradient (< 1*10−5/µm).

Keywords

microelectro-mechanical (MEMS)structuralstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J05-02
Copyright
Copyright © Materials Research Society 2008

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References

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