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Status of Nitride Based Light Emitting and Laser Diodes on SiC

Published online by Cambridge University Press:  10 February 2011

K. Doverspike ,
G. E. Bulman ,
S. T. Sheppard ,
H. S. Kong ,
M. Leonard ,
H. Dieringer ,
T. W. Weeks Jr ,
J. Edmond ,
J. D. Brown  and
J. T. Swindle
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K. Doverspike
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
G. E. Bulman
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
S. T. Sheppard
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
H. S. Kong
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
M. Leonard
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
H. Dieringer
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
T. W. Weeks Jr
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
J. Edmond
Affiliation:
Cree Research, Inc, 2810 Meridian Parkway, Durham NC 27713.
J. D. Brown
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27659.
J. T. Swindle
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27659.
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27659.
Y- K Song
Affiliation:
Brown University, Providence RI 02912.
M. Kuball
Affiliation:
Brown University, Providence RI 02912.
A. Nurmikko
Affiliation:
Brown University, Providence RI 02912.
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Abstract

Single crystal thin films with compositions from the A1N-InN-GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. The conducting buffer layer LEDs employed an AlGaN buffer layer which provides a conduction path between SiC and the active device region. The external quantum efficiency of the LEDs was 3% at 20 mA- 3.6V and peak emission wavelength of 430 nm. Violet and blue LDs were fabricated and consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. Lasing was obtained both on structures using an insulating buffer layer, and also on structures using a conducting buffer layer. The resulting lasers operated at room temperature using pulsed and continuous wave operation with an emission wavelength of 404-435 rim. The lowest threshold current density obtained for lasing was 11 kA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1169
Copyright
Copyright © Materials Research Society 1998

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References

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