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Step Coverage Modeling of Thin Films Deposited by CVD Using Finite Element Method

Published online by Cambridge University Press:  15 February 2011

Ching-Yi Tsai  and
Seshu B. Desu
Ching-Yi Tsai
Affiliation:
Department of Engineering Science and MechanicsVirginia Polytechnic Institute and State University, Blacksburg, VA, 24061
Seshu B. Desu
Affiliation:
Department of Materials EngineeringVirginia Polytechnic Institute and State University, Blacksburg, VA, 24061
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Abstract

A two—dimensional finite element model was developed to study the step coverage of submicron trenches with arbitrary shape under chemical vapor deposition processes. Parameters that characterize the step coverage were found to be the surface Damkohler number, ratio of diffusion coefficients inside and outside of the trench, and aspect ratio of the trench geometry. Efforts were concentrated on studying the step coverage of SiO2 film deposited from SiH4/O2 precursors within rectangular shape trenches. The model predictions were found to be in good agreement with reported experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 65
Copyright
Copyright © Materials Research Society 1992

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