Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-15T06:53:03.689Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain and Damage in Silicon Due to a Deep Oxygen Implantation

Published online by Cambridge University Press:  28 February 2011

Thad Vreeland  and
T.S. Jayadev
Thad Vreeland
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125
T.S. Jayadev
Affiliation:
Lockheed Research Laboratory, Palo Alto, CA 94304
Get access

Abstract

Silicon wafers, implanted with oxygen at 550°C to form a buried oxide layer have been examined with TEM and x-ray diffraction. Implantation damage increased with depth up to ~1500 Å where some amorphous regions were seen. The amorphous region extended for -4500 Å to a damaged crystalline region ~1000 Å thick. Double crystal x-ray rocking curves of the as-implanted and of annealed crystals were obtained and analyzed. The strain normal to the (100) surface in the as-implanted crystalline Si did not exceed +0.05%. After an argon anneal, the strain disappeared, leaving a crystal with a lower density of extended defects and no measureable misorientation of surface or deep layers. In marked contrast, an anneal in a hydrogen atmosphere exhibited no normal strain but contained regions above the oxide layer which differed in orientation from the substrate. The misorientation ranged up to ~0.1 degree.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 263
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hamdi, A.H., McDaniel, F.D., Pinnizzotto, R.F., Matteson, S., Lam, H.W., and Malhi, S.D.S., Appl. Phys. Lett. 41, 1143 (1982).Google Scholar
2.Wilson, S.R. and Fathy, D., J. Elect. Mat. 13, 127 (1984).Google Scholar
3.Speriosu, V.S., J. Appl. Phys. 52, 6094 (19-81).Google Scholar
4.Wei, C.M., Tombrello, T.A., and Vreeland, T. Jr, submitted to J. Appl. Phys.Google Scholar
5.Speriosu, V.S. and Vreeland, T. Jr, J. Appl. Phys. 56, 1591 (1984).Google Scholar
6.Speriosu, V.S., Paine, B.M., Nicolet, M-A. and Glass, H., Appl. Phys. Lett. 40, 604 (1982).Google Scholar
7.Das, K., Shorthause, G., Butcher, J., and Anand, K.V., Microelectron. J. 14, 88 (1983).Google Scholar