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Strain in Epitaxial GaAs on Si and CaF2/Si

Published online by Cambridge University Press:  26 February 2011

L. J. Schowalter ,
Shin Hashimoto ,
G. A. Smith ,
W. M. Gibson ,
N. Lewis ,
E. L. Hall  and
P. W. Sullivan
L. J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
Shin Hashimoto
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, New York 12222
G. A. Smith
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, New York 12222
W. M. Gibson
Affiliation:
Physics Department and Institute for Particle-Solid Interaction, State University of New York at Albany, Albany, New York 12222
N. Lewis
Affiliation:
GE Research and Development Center, Schenectady, New York 12308
E. L. Hall
Affiliation:
GE Research and Development Center, Schenectady, New York 12308
P. W. Sullivan
Affiliation:
VG Semicon, East Grinstead, Sussex RH19 1QY, UK
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Abstract

In this paper, ion channeling techniques are used to show that epitaxial GaAs layers grown on vicinal Si(001) wafers do not have their [001] axis precisely aligned with that of the Si substrate. Instead, the [001] axis of the GaAs layer is found to be tilted toward the surface normal of the Si substrate. This tilt was found to be ∼0.2° on vicinal Si(001) substrates which have their [001] axis tilted 4° toward the [110] azimuth. It is speculated that this misalignment is reponsible for the residual density of threading dislocations in the GaAs on Si layer. An approach described here, which can be used to avoid strain in the GaAs layer, is to grow a CaF2 buffer layer between the Si substrate and the epitaxial GaAs layer. High quality epitaxial GaAs layers have been obtained on both CaF 2 /Si(001) and CaF 2 /Si(111) substrates. Strain measurements of the epitaxial GaAs on the CaF 2 buffer layers indicate that these layers have strains below our detection limits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 449
Copyright
Copyright © Materials Research Society 1988

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References

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