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Strain Mapping in InGaAsP Epitaxial Films by An X-Ray Diffraction Technique

Published online by Cambridge University Press:  26 February 2011

Jharna Chaudhuri ,
William E. Mayo  and
Sigmund Weissmann
Jharna Chaudhuri
Affiliation:
Mechanical Engineering Department, The Wichita State University, Wichita, KS 67208
William E. Mayo
Affiliation:
Department of Mechanics and Materials Science, College of Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854
Sigmund Weissmann
Affiliation:
Department of Mechanics and Materials Science, College of Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854
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Abstract

A new x-ray diffraction method is developed to determine the full elastic strain tensor and its distribution about a strain center in single crystal materials. It is based on the recently developed Computer Aided Rocking Curve Analyzer and is particularly well suited for analysis of thin film structures common to electronic materials. This technique will be described in detail, and its application in measuring the non-uniform strains in InGaAsP epitaxial film on InP substrate will be presented. Also, possibility of using this method to measure the uniformity of film thickness will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 681
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Rozgonyi, G.A. and Ciesielka, T.J., Rev. Sci. Inst., 44 (1973) 1053.Google Scholar
2. Datsenko, L.I., Gureev, A.N., Korotkevich, N.F., Soldatenka, N.N. and Tkhorik, Yu A., Thin Solid Films, 7 (1971) 117.Google Scholar
3. Kamins, T.I. and Meieran, E.S., J. Appl. Phys., 44 (1973) 5064.Google Scholar
4. Bohg, A., Phys. Stat. Sol. (a), 46 (1978) 445.Google Scholar
5. Wang, C.C. and McFarlane, S.H. III. Thin Solid Films, 31 (1976) 3.Google Scholar
6. Kawamura, Y. and Okamoto, H., J. Appl. Phys., 50 (1979) 4457.Google Scholar
7. Angilello, J., d'Heurle, F., Peterson, S. and Segmuller, A., J. Vac. Sci. Tech., 17 (1980) 471.Google Scholar
8. Rozgonyi, G.A. and Miller, D.C., Thin Solid Films, 31 (1976) 185.Google Scholar
9. Oe, K., Shinoda, Y. and Sugiyama, K., Appl. Phys. Lett., 33 (1978) 962.Google Scholar
10. Ewing, R.E. and Smith, K.K., J. Appl. Phys., 39 (1968) 5943.Google Scholar
11. Matsui, J., Onabe, K., Kamjima, T. and Hayashi, I., J. Electrochem. So., 126 (1979) 664.Google Scholar
12. van Mellaert, L. and Schwuttke, G.H., J. App. Phys., 43 (1972) 687.Google Scholar
13. Stock, S.R., Chen, H. and Birnbaum, H.K., Proc. US-France Cooperative Science Seminar, Snowmass, Co., (1984) 135.Google Scholar
14. Liu, H.Y., Mayo, W.E. and Weissmann, S., Mat. Sci. Eng., 63 (1984) 81.Google Scholar
15. Imura, T., Weissman, S. and Slade, J.J. Jr, Act Cryst., 15 (1962) 786.Google Scholar
16. Mahajan, S., Bell Telephone Laboratories, Murray Hill, NJ, Private Communication.Google Scholar
17. Yazici, R., Mayo, W.E., Takemoto, T. and Weissman, S., J. Appl. Cryst., 16 (1983) 89.Google Scholar
18. Carnahan, B., Luther, H.A. and Wilkens, J.O., “Applied Numerical Methods” John Wiley, (1969) 1560.Google Scholar
19. Mayo, W.E., Chaudhuri, J., Weissmann, S., Metals/Materials Technology Series, 1983, ASM Symposia on Non-destructive Evaluations.Google Scholar
20. Cullity, , “Elements of X-ray Diffraction”, Addison Wesley, 1978, 134.Google Scholar