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Strain measurements in s-Si/SiGe nanostructures by quantitative high-resolution electron microscopy

Published online by Cambridge University Press:  01 February 2011

Florian Hüe ,
Martin Hÿtch ,
Hugo Bender ,
Jean-Michel Hartmann  and
Alain Claverie
Florian Hüe
Affiliation:
hue@cemes.fr, CNRS, CEMES, 29 rue Jeanne Marvig, Toulouse, 31055, France
Martin Hÿtch
Affiliation:
hytch@cemes.fr, CNRS, CEMES, 29 rue Jeanne Marvig, Toulouse, 31055, France
Hugo Bender
Affiliation:
bender@imec.be, IMEC, Kapeldreef 75, Leuven, 3001, Belgium
Jean-Michel Hartmann
Affiliation:
jean-michel.hartmann@cea.fr, CEA-Leti, 17 rue des Martyrs, Grenoble, 38054, France
Alain Claverie
Affiliation:
claverie@cemes.fr, CNRS, CEMES, 29 rue Jeanne Marvig, Toulouse, 31055, France
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Abstract

We have studied strained Si layers grown on Si1-xGex virtual substrate (VS) by high-resolution transmission electron microscopy (HRTEM). Aberration-corrected HRTEM coupled with geometric phase analysis (GPA) provides precise measurements of strain. Different parameters are investigated: the VS composition (x=20, 30, 40 and 50%) and the s-Si layer thickness. Finite element method simulations confirm our measurements. Measurements and simulations lead to the conclusion that the strain state of the deposited layer is independent of the layer thickness. We apply the technique to measuring strains in the channel region of a p-MOSFET and show that the technique is a promising metrological tool for nanoelectronic devices.

Keywords

transmission electron microscopy (TEM)microelectronicsstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C20-04
Copyright
Copyright © Materials Research Society 2008

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