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Strain Relaxation During Solid-Phase Epitaxial CrystallisationOf GexSi1−x Alloy Layers with Depth Dependent GeCompositions

Published online by Cambridge University Press:  15 February 2011

Wah-Chung Wong  and
Robert G. Elliman
Wah-Chung Wong
Affiliation:
Electronic Materials Engineering Department, Australian National University, Canberra, ACT 0200, Australia
Robert G. Elliman
Affiliation:
Electronic Materials Engineering Department, Australian National University, Canberra, ACT 0200, Australia
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Abstract

Solid-phase epitaxial growth (SPEG) of amorphous GeSi alloy layers has beenexamined. It is shown that fully strained depth dependent GeSi alloy layerscan be produced by multiple ion-implantation and SPEG for implant dosesbelow critical values. For doses above these critical values strainrelaxation is shown to occur during SPEG at a well defined depth, and to becorrelated with a reduction in the SPEG velocity caused by roughening orfaceting of the crystalline/amorphous interface. The velocity reduction isshown to be a reliable indicator of strain relaxation. Both the criticaldose and the depth at which strain relaxation occurs are shown to be inexcellent agreement with equilibrium critical thickness theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 491
Copyright
Copyright © Materials Research Society 1994

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References

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