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Strained SiC: Ge Layers in 4H SiC formed by Ge Implantation

Published online by Cambridge University Press:  11 February 2011

M. W. Dashiell ,
G. Xuan ,
Xin Zhang ,
E. Ansorge  and
J. Kolodzey
M. W. Dashiell
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
G. Xuan
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
Xin Zhang
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
E. Ansorge
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
J. Kolodzey
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716
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Abstract

The ion implantation of germanium into 4H-SiC at 1000 °C resulted in crystalline SiC:Ge layers that are coherently strained to the (0001) oriented 4H-SiC substrates. Germanium implantation energies of 140 keV and 50 keV were chosen to form approximately 100nm thick step-like SiC:Ge layers with Ge atomic fractions ranging from 0.0007 to 0.006. High-resolution x-ray diffraction (HRXRD) and reciprocal space mapping reveal a high-quality, compressively strained SiC:Ge layer. High-temperature annealing resulted in partial relaxation of the macroscopic layer strain, however the SiC:Ge layer remained strained with a coherent interface for annealing up to at least 1650°C. Because Ge is a group-IV atom like Si and C, its incorporation into the lattice is expected to act as an isoelectronic impurity, rather than a charged donor or acceptor. Thus, high-quality, SiC:Ge layers have the potential for bandgap and strain engineered electronics such as SiC-based high electron mobility transistors (HEMTs) for RF-power electronics. Currently there is no established heterojunction pair in SiC material technology for fabricating HEMTs and other heterojunction devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K6.7
Copyright
Copyright © Materials Research Society 2003

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References

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