Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-13T01:05:19.866Z Has data issue: false hasContentIssue false
  • English
  • Français

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

Published online by Cambridge University Press:  09 August 2011

H. Koyama  and
P. M. Fauchet
H. Koyama
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Get access

Abstract

The optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 9
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kanemitsu, Y., Phys. Rev. B 49, 16845 (1994).Google Scholar
2. Delerue, C., Lannoo, M., Allan, G., Martin, E., Mihalcescu, I., Vial, J. C., Romestain, R., Muller, F., and Bsiesy, A., Phys. Rev. Lett. 75, 2228 (1995).Google Scholar
3. Kovalev, D., Averboukh, B., Ben-Chorin, M., Koch, F., Efros, Al. L. and Rosen, M., Phys. Rev. Lett. 77, 2089 (1996).Google Scholar
4. Klimov, V., McBranch, D. and Karavanskii, V., Phys. Rev. B 52, R16989 (1995).Google Scholar
5. Matsumoto, T., Daimon, M., Mimura, H., Kanemitsu, Y. and Koshida, N., J. Electrochem. Soc. 142, 3528 (1995).Google Scholar
6. Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B. K., Koch, F. and Lehmann, V., Appl. Phys. Lett. 61, 943 (1992).Google Scholar
7. Batstone, J. L., Tischler, M. A., and Collins, R. T., Appl. Phys. Lett. 62, 2667 (1993).Google Scholar
8. Tsybeskov, L., Duttagupta, S. P. and Fauchet, P. M., Solid State Commun. 95, 429 (1995).Google Scholar
9. Koyama, H., Tsybeskov, L., and Fauchet, P. M., Lumin, J.. (in press).Google Scholar
10. Koyama, H. and Fauchet, P. M., Appl. Phys. Lett. 73, 3259 (1998).Google Scholar
11. Costa, J., Roura, P., Sardin, G., Morante, J. R., and Bertran, E., Appl. Phys. Lett. 64, 463 (1994); J. Costa, P. Roura, J. R. Morante, and E. Bertran, J. Appl. Phys. 83, 7879 (1998).Google Scholar
12. Grum, F. and Becherer, R. J., Optical Radiation Measurements Vol. 1, Academic Press, New York, 1979, Chap. 4.Google Scholar
13. Daub, E. and Wtirfel, P., Phys. Rev. Lett. 74, 1020 (1995); J. Appl. Phys. 80, 5325 (1996).Google Scholar
14. Lax, M., J. Appl. Phys. 48, 3919 (1977).Google Scholar