Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-30T23:17:06.892Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Y2O3 Buffer Layer Prepared by Two Step Process

Published online by Cambridge University Press:  21 March 2011

Dong-Gun Lim ,
Bum-Sik Jang ,
Sang-Il Moon ,
Dong-Min Jang ,
Jinhee Heo  and
Junsin Yi
Dong-Gun Lim
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Bum-Sik Jang
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Sang-Il Moon
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Dong-Min Jang
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Jinhee Heo
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Junsin Yi
Affiliation:
School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Kyunggi-do, 440-746, Korea
Get access

Abstract

In this paper we investigated a feasibility of Y2O3 films as a buffer layer of MFIS (metal ferroelectric insulator semiconductor) type capacitor. Buffer layers were prepared by two-step process of a low temperature film growth and subsequent RTA treatment. Investigated parameters are given as substrate temperature, O2 partial pressure, post-annealing temperature, and suppression method of interfacial SiO2layer generation. By employing an ultra thin Y pre-metal layer, unwanted SiO2 layer generation was successfully suppressed at an interface between the buffer layer and Si substrate. By using two-step process, we improved the leakage current density of Y2O3 films by 2 orders and the Dit as low as 8.72×1010 cm−2eV−1. For a substrate temperature above 400°C and O2 partial pressure of 20%, we observed cubic Y2O3 phase domination in XRD spectra. We achieved 1.75% lattice mismatch between Y2O3 film and silicon substrate. Y2O3 buffer layer for a single transistor FRAM exhibited optimal properties when it was grown at 400°C with 20% O2 partial pressure then RTA treatment at 900°C in oxygen ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F7.7
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Imada, S., Shourki, S., Tokumitsu, E., and Ishiwara, H., Jpn. J. Appl. Phys. 37, 6497 (1998).Google Scholar
[2] Wu, Y. M. and Lo, J. T., Jpn. J. Appl. Phys. 37, 4943, (1998).Google Scholar
[3] Zhang, S. and Xiao, R, J. Appl. Phys., 83, 3842 (1998).Google Scholar
[4] Grytsiv, M. Y., Bondar, V. D., and Chykhrii, S. I., Inorganic Materials, 32, 1203, (1996).Google Scholar
[5] Cho, S. M. and Jeon, D. Y., Thin Solid Films, 338, 152, (1999).Google Scholar
[6] Watanabe, K., Hartmann, A. J., Lamb, R. N., and Scott, J. F., J. Appl. Phys., 84, (1998).Google Scholar