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Structural and Magnetic Characterization of MOCVD Grown GaMnN and GaFeN Nanostructures

Published online by Cambridge University Press:  01 February 2011

Shalini Gupta ,
Hun Kang ,
Matthew H. Kane ,
Eun Hyun Park  and
Ian T. Ferguson
Shalini Gupta
Affiliation:
guptasha@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta GA 30332-0250, United States
Hun Kang
Affiliation:
hunkang@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Matthew H. Kane
Affiliation:
mhkane@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Eun Hyun Park
Affiliation:
ehpark@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Ian T. Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
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Abstract

The growth of Ga1-xMnxN and Ga1-xFexN nanostructures was carried out by MOCVD. Introduction of transition metals (TM) Mn and Fe in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. The Ga1-xMnxN nanostructures showed hysteresis behavior at 5K. Room temperature ferromagnetism was obtained in the Ga1-xFexN nanostructures unlike its bulk counterpart. This paper presents the growth and magnetization study of Ga1-xTMxN nanostructures. These structures could be used to enhance the efficiency of spintronic devices.

Keywords

nanostructureferromagneticchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-24
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Wolf, S.A., et al., Spintronics, A Spin-Based Electronics Vision for the Future. Science, 2001 294: p. 1488–1495.Google Scholar
2. Akinaga, H. and Ohno, H., Semiconductor spintronics. IEEE Transactions on Nanotechnology, 2002 1(1): p. 19–31.Google Scholar
3. Matsukura, F., et al., Transport properties and origin of ferromagnetism in (Ga,Mn)As. Physical Review B (Condensed Matter), 1998 57(4): p. 2037–40.Google Scholar
4. Ohno, H., Properties of ferromagnetic III-V semiconductors. Journal of Magnetism and Magnetic Materials, 1999 200: p. 110–129.Google Scholar
5. Dietl, T., et al., Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors. Science, 2000. 287(5455): p. 1019–1022.Google Scholar
6. Ghosh, S. and Bhattacharya, P., Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot lightemitting diode. Applied Physics Letters, 2002. 80(4): p. 658–660.Google Scholar
7. Holub, M., et al., Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K. Applied Physics Letters, 2004. 85(6): p. 973–975.Google Scholar
8. Bimberg, Dieter, Grundmann, Marius, and Ledentsov, Nikolai N., Quantum Dot Heterostructures. 1999: John Wiley & Sons, England.Google Scholar
9. Kane, M.H., et al., Magnetic and optical properties of Ga1-xMnxN grown by metalorganic chemical vapour deposition. Semiconductor Science and Technology, 2005. 20(3): p. 5–9.Google Scholar
10. Kuroda, S., et al., Optimization of the growth of GaMnN epilayers using plasma-assisted MBE. Physica Status Solidi B, 2003. 240(2): p. 443–446.Google Scholar
11. Gupta, S., et al., A nucleation study of group III-nitride multifunctional nanostructures. Journal of Crystal Growth, 2006. 287(2): p. 596–600.Google Scholar
12. Widmann, F., et al., Giant piezoelectric effect in GaN self-assembled quantum dots. Microelectronics Journal, 1999. 30(4–5): p. 353–356.Google Scholar
13. Pearton, S.J., et al. Effects of defects and doping on wide band gap ferromagnetic semiconductors. 2003. Aarhus, Denmark: Elsevier.Google Scholar
14. Rosa, A.L., et al., Adsorption and incorporation of silicon at GaN(0001) surfaces. Applied Physics Letters, 2002. 80: p. 2008–2010.Google Scholar
15. Copel, M., et al., Surfactants in epitaxial growth. Physical Review Letters, 1989. 63(6): p. 632–5.Google Scholar
16. Liu, C., Yun, F., and Morkoc, H., Ferromagnetism of ZnO and GaN: a review. Journal of Materials Science: Materials in Electronics, 2005. 16(9): p. 555–97.Google Scholar
17. Katayama-Yoshida, H., et al., Theory of ferromagnetic semiconductors. physica status solidi (a), 2007. 204(1): p. 15–32.Google Scholar
18. Pearton, S.J., et al., Wide bandgap GaN-based semiconductors for spintronics. Journal of Physics: Condensed Matter, 2004. 16(7): p. 209–45.Google Scholar
19. Sato, K. and Katayama-Yoshida, H., First principles materials design for semiconductor spintronics. Semiconductor Science and Technology, 2002. 17(4): p. 367–76.Google Scholar
20. Przybylinska, H., et al., Magnetic properties of a new spintronic material-GaN:Fe. Materials Science & Engineering B (Solid-State Materials for Advanced Technology), 2006. 126(2–3): p. 222–5.Google Scholar