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Structural and Optical Characterization of CuxGaySe2 Thin Films under Excitation with Above and Below Band Gap Laser Light

Published online by Cambridge University Press:  01 February 2011

C. Xue ,
D. Papadimitriou ,
Y.S. Raptis ,
T. Riedle ,
N. Esser ,
W. Richter ,
S. Siebentritt ,
S. Nishiwaki ,
J. Albert  and
M.Ch. Lux-Steiner
C. Xue
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
D. Papadimitriou
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
Y.S. Raptis
Affiliation:
National Technical University of Athens, Department of Physics, GR-15780 Athens, Greece.
T. Riedle
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
N. Esser
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
W. Richter
Affiliation:
Technical University of Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin, Germany.
S. Siebentritt
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
S. Nishiwaki
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
J. Albert
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
M.Ch. Lux-Steiner
Affiliation:
Hahn-Meitner Institute, Glienickerstr. 100, D-14109 Berlin, Germany.
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Abstract

CuxGaySe2 MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2 films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2 films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2 indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V3.7
Copyright
Copyright © Materials Research Society 2002

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References

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