Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-13T05:56:16.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and optical properties of MOCVD InAlN epilayers

Published online by Cambridge University Press:  01 February 2011

S. Hernández ,
K. Wang ,
D. Amabile ,
E. Nogales ,
D. Pastor ,
R. Cuscó ,
L. Artús ,
R.W. Martin ,
K.P. O'Donnell  and
I.M. Watson
...Show all authors
S. Hernández
Affiliation:
sergi.hernandez@strath.ac.uk, University of Strathclyde, University of Strathclyde, John Anderson Building, 107 Rottenrow, Glasgow, N/A, G4 0NG, United Kingdom
K. Wang
Affiliation:
k.wang@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
D. Amabile
Affiliation:
d.amabile@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
E. Nogales
Affiliation:
emilio.nogales@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
D. Pastor
Affiliation:
dpastor@ija.csic.es, CSIC, Institut Jaume Almera, Spain
R. Cuscó
Affiliation:
rcusco@ija.csic.es, CSIC, Institut Jaume Almera, Spain
L. Artús
Affiliation:
lartus@ija.csic.es, CSIC, Institut Jaume Almera, Spain
R.W. Martin
Affiliation:
r.w.martin@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
K.P. O'Donnell
Affiliation:
k.p.odonnell@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
I.M. Watson
Affiliation:
i.m.watson@stath.ac.uk, University of Strathclyde, Institute of Photonics, United Kingdom
RENiBEl Network
Affiliation:
k.p.odonnell@strath.ac.uk, University of Strathclyde, Department of Physics, United Kingdom
Get access

Abstract

We have studied the structural and optical properties of InAlN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm-1, which have been assigned to InN-like and AlN-like E2 modes and A1(LO) mode of the InAlN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E and A(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InAlN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of ≈0.5 eV in the composition range close to the lattice-matched condition.

Keywords

alloyoptical propertiesRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Carlin, J.-F., Zellweger, C., Dorsaz, J., Nicolay, S., Christmann, G., Feltin, E., Butté, R. and Grandjean, N., Phys. Stat. Solidi B 242, 2326 (2005).CrossRefGoogle Scholar
[2] Watson, I. M., Liu, C., Gu, E., Dawson, M. D., Edwards, P. R. and Martin, R. W., Appl. Phys. Lett. 87, 151901 (2005).CrossRefGoogle Scholar
[3] Herńndez, S., Cuscó, R., Pastor, D., Artús, L., O'Donnell, K. P., Martin, R. W., Watson, I. M., Nanishi, Y. and Calleja, E., J. Appl. Phys. 98, 013511 (2005).CrossRefGoogle Scholar
[4] Naik, V. M., Weber, W. H., Uy, D., Haddad, D., Naik, R., Danylyuk, Y. V., Lukitsch, M. J., Auner, G. W., and Rimai, L., Appl. Phys. Lett. 79, 2019 (2001).CrossRefGoogle Scholar
[5] Grille, H., Schnittler, Ch. and Bechstedt, F., Phys. Rev. B 61, 6091 (2000).CrossRefGoogle Scholar
[6] Danylyuk, Y. V., Lukitsch, M. J., Huang, C., Auner, G. W., Naik, R. and Naik, V. M., Mat. Res. Soc. Symp. 639, G6.29 (2001).CrossRefGoogle Scholar
[7] Martin, R. W., Middleton, P. G., O'Donnell, K. P., Van der Stricht, W., Appl. Phys. Lett. 74, 263 (1999).CrossRefGoogle Scholar
[8] Lukitsch, M. J., Danylyuk, Y. V., Naik, V. M., Huang, C., Auner, G. W., Rimai, L., and Naik, R., Appl. Phys. Lett. 79, 632 (2001).Google Scholar
[9] Sasaki, C., Naito, H., Iwata, M., Kudo, H., Yamada, Y., Taguchi, T., Jyouichi, T., Okagawa, H., Tadatomo, K., and Tanaka, H., J. Appl. Phys. 93, 1642 (2003).CrossRefGoogle Scholar