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Structural and optical properties of Zn1−xCoxO and ZnCo2O4 thin films

Published online by Cambridge University Press:  01 February 2011

Kousik Samanta ,
Pijush Bhattacharya ,
Ram S. Katiyar ,
W. Iwamoto ,
R. R. Urbano ,
P. G. Pagliuso  and
C. Rettori
Kousik Samanta
Affiliation:
ssp_ks@hotmail.com, University of Puerto Rico, Physics, PO.Box 23343, San Juan, Puerto Rico, 00931, Puerto Rico, 787-751-4210, 787-764-2571
Pijush Bhattacharya
Affiliation:
pijushb@gmail.com, University of Puerto Rico, Physics, Puerto Rico
Ram S. Katiyar
Affiliation:
rkatiyar@rrpac.upr.clu.edu, University of Puerto Rico, Physics, Puerto Rico
W. Iwamoto
Affiliation:
rettori@ifi.unicamp.br, Instituto de Fisica DEQ-UNICAMP Cidade Universitaria- Barao Geraldo 13083-970 Campinas, SP, Brazil., Fisica, Brazil
R. R. Urbano
Affiliation:
rettori@ifi.unicamp.br, Instituto de Fisica DEQ-UNICAMP Cidade Universitaria- Barao Geraldo 13083-970 Campinas, SP, Brazil., Fisica, Brazil
P. G. Pagliuso
Affiliation:
rettori@ifi.unicamp.br, Instituto de Fisica DEQ-UNICAMP Cidade Universitaria- Barao Geraldo 13083-970 Campinas, SP, Brazil., Fisica, Brazil
C. Rettori
Affiliation:
rettori@ifi.unicamp.br, Instituto de Fisica DEQ-UNICAMP Cidade Universitaria- Barao Geraldo 13083-970 Campinas, SP, Brazil., Fisica, Brazil
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Abstract

Thin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.

Keywords

semiconductingRaman spectroscopylaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-09
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES:

1. Ando, K., Saito, H., Jin, Zhengwu, Fukumura, T., Kawasaki, M., Matsumoto, Y., and Koinuma, H., J. Appl. Phys., 89, 7284 (2001).10.1063/1.1356035Google Scholar
2. Norton, D. P., Overberg, M. E., Pearton, S. J., and Pruessner, K., Budai, J. D., Boatner, L. A., Chisholm, M. F., Lee, J. S., Khim, Z. G., Park, Y. D., and Wilson, R. G., Appl. Phys. Lett., 83, 5488 (2003).10.1063/1.1637719Google Scholar
3. Ramachandran, S., Tiwari, Ashutosh, and Narayan, J., Appl. Phys. Lett., 84, 5255 (2004).10.1063/1.1764936Google Scholar
4. Dietl, T., Ohno, H., Matsukura, F., Cubert, J. and Ferrand, D., Science, 287, 1019 (2000).10.1126/science.287.5455.1019Google Scholar
5. Sato, K., and Katayama-Yoshida, H., Jpn J. Appl. Phys., Part 2 39, L555 (2000).10.1143/JJAP.39.L555Google Scholar
6. Wu, Jih-Jen, Liu, Sai-Chang, and Yang, Ming-Hsun, Appl. Phys. Lett., 85, 1027 (2004).10.1063/1.1779958Google Scholar
7. Yan, Shi-shen, Ren, C., Wang, X., Xin, Y., and Zhou, Z. X., Mei, L. M., Ren, M. J., Chen, Y. X., and Liu, Y. H., and Garmestani, H., Appl. Phys. Lett., 84, 2376 (2004).10.1063/1.1690881Google Scholar
8. Lawes, G., Risbud, A. S., Ramirez, A. P., and Seshadri, Ram, Phys. Rev. B, 71, 045201 (2005).10.1103/PhysRevB.71.045201Google Scholar
9. Park, Jung H., Kim, Min G., Jang, Hyun M., and Ryu, Sangwoo, Kim, Young M., Appl. Phys. Lett., 84, 1338 (2004).10.1063/1.1650915Google Scholar
10. Damen, T. C, Porto, S. P. S., and Tell, B., Phys. Rev 142, 570 (1966).10.1103/PhysRev.142.570Google Scholar
11. Chen, Z. Q., Kawasuso, A., Xu, Y., Naramoto, H., Yuan, X. L., Sekiguchi, T., Suzuki, R., Ohdaira, T., J. Appl. Phys., 97, 013528 (2005).10.1063/1.1821636Google Scholar
12. Manjon, F. J., Mari, B., Serrano, J., Romero, A. H., J. Appl. Phys., 97, 053516 (2005).10.1063/1.1856222Google Scholar
13. Samanta, K., Bhattacharya, P., Katiyar, R. S., Appl. Phys. Lett., 87, 101903 (2005).10.1063/1.2039995Google Scholar
14. Sluiter, Marcel H. F., Kawazoe, Y., Sharma, Parmanand, Inoue, A., Raju, A. R., Rout, C., Waghmare, U.V., Phys. Rev. Lett., 94, 187204 (2005).10.1103/PhysRevLett.94.187204Google Scholar
15. Martínez, B., Sandiumenge, F., and Balcells, Ll., Arbiol, J., Sibieude, F. and Monty, C., Phys. Rev. B, 72, 165202 (2005).10.1103/PhysRevB.72.165202Google Scholar
16. Kevin Kittilstved, R., Norberg, Nick S., and Gamelin, Daniel R., Phys. Rev. Lett., 94, 147209 (2005).10.1103/PhysRevLett.94.147209Google Scholar