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Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes

Published online by Cambridge University Press:  31 January 2011

Shigetaka Tomiya ,
Masao Ikeda ,
Shinji Tanaka ,
Yuya Kanitani ,
Tadakatsu Ohkubo  and
Kazuhiro Hono
Shigetaka Tomiya
Affiliation:
Shigetaka.Tomiya@jp.sony.comstomiya@ca2.so-net.ne.jp, Sony Corporation, Advanced Materials Laboratories, Atsugi, Japan
Masao Ikeda
Affiliation:
Masao.Ikeda@jp.sony.com, Sony Corporation, Advanced Materials Laboratories, Atsugi, Kanagawa, Japan
Shinji Tanaka
Affiliation:
Shinji.Tanaka@jp.sony.com, Sony Corporation, Advanced Materials Laboratories, Atsugi, Kanagawa, Japan
Yuya Kanitani
Affiliation:
Yuya.Kanitani@jp.sony.com, Sony Corporation, Advanced Materials Laboratories, Atsugi, Kanagawa, Japan
Tadakatsu Ohkubo
Affiliation:
OHKUBO.Tadakatsu@nims.go.jp, National Institute for Materials Science, Tsukuba, Japan
Kazuhiro Hono
Affiliation:
kazuhiro.hono@nims.go.jp, National Institute for Materials Science, Tsukuba, Japan
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Abstract

Reduction of structural defects in III-nitride based optical devices is of critical importance for high efficient and high reliable optoelectronic performance. Here, three different types of structural defects such as threading dislocations, Mg-related pyramidal defects and columnar defects, observed in GaN-related epitaxial films are described and their relation to reliability of GaN-based LDs is discussed. Composition fluctuations of GaInN MQWs with different In concentrations by analyzed by a laser assisted 3D atom probe are also described.

Keywords

III-Vlaserdefects

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