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Structural, Optical and Electrical Properties of <P> μc-Si:H Very Thin Films Deposited by the VHF-GD Technique

Published online by Cambridge University Press:  16 February 2011

Roger Flückiger ,
J. Meier ,
A. Shah ,
A. Catana ,
M. Brunel ,
H. V. Nguyen ,
R. W. Collins  and
R. Carius
Roger Flückiger
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
A. Shah
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
A. Catana
Affiliation:
Prospective et recherche, EPFL, 1015 Lausanne, Suisse
M. Brunel
Affiliation:
Laboratoire de Cristallographie du CNRS, BP 166x, Grenoble Cedex 9, France-38042
H. V. Nguyen
Affiliation:
Materials Research Laboratory, Penn State Univ., University Park, PA 16802, USA
R. W. Collins
Affiliation:
Materials Research Laboratory, Penn State Univ., University Park, PA 16802, USA
R. Carius
Affiliation:
ISI-PV, Forschungszentrum Jülich, P.O. Box 1913, 5170 Julien, Germany
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Abstract

In this paper we present new results for very thin <p> μc-Si:H films (< 350 Å) deposited at low temperature (170 C) by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. First, the effect of boron doping on the growth and electrical properties of μc-Si:H very thin films is investigated, leading to an optimised value of about 0.6 % (B2H6/SiH4). Structural properties of an optimised thickness series ranging from 100 to 350 Å are studied using TEM, Raman, grazing angle X-ray diffraction/reflection and spectroscopie ellipsometry. Further, a columnar structure growth model for these very thin <p>-type μc-Si:H films will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 511
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Prasad, K., Kroll, U., Finger, F., Shah, A., Dorier, J.-L., Howling, A., Baumann, J. and Schubert, M., Mat. Res. Soc. Symp. Proc. 219, 469 (1991).CrossRefGoogle Scholar
2. Flückiger, R., Meier, J., Keppner, H., Götz, M. and Shah, A., 23rd IEEE PVSC, 839 (1993).Google Scholar
3. Ghosh, S., De, A., Ray, S. and Barua, A.K., J. Appl. Phys. 71 (10), 5205 (1992).Google Scholar
4. Chou, J.-S., Sah, W.-J., Lee, S.-C., Chang, T.-C. and Wang, J.-C., Materials Chemistry and Physics 32, 273 (1992).Google Scholar
5. Prasad, K., PhD thesis, Institute of Microtechnology, University of Neuchâtel, 1991.Google Scholar
6. Flückiger, R., Meier, J., Keppner, H., Kroll, U., Shah, A., Greim, O., Morris, M., Pohl, J., Hapke, P. and Carius, R., 11th EC PVSEC, 617 (1992).Google Scholar
7. Curtins, H., Wyrsch, N. and Shah, A., Electronics Letters 23 (5), 228 (1987).Google Scholar
8. Tscharner, R., Fischer, D., Keppner, H., Shah, A., Howling, A., Dorier, J.-L. and Hollenstein, Ch., PVSEC-6, 311 (1992).Google Scholar
9. Collins, R.W., Proc. Soc. Photo-Opt. Instrum. Eng. 617, 62 (1986).Google Scholar
10. He, Y., Yen, Y., Wu, R. and Chen, K., J. Non-Cryst. Solids 59&60, 831 (1983).Google Scholar
11. Brodsky, M., Cardona, M. and Cuomo, J., Phys. Rev. B 16, 3559 (1977).CrossRefGoogle Scholar
12. Scherrer, P., Nachr. Goettinger Gesell. 98 (1918); Zsigmondy's Kolloidchemie 3rd Ed. p. 394.Google Scholar
13. Collins, R.W. and Yang, B.Y., J. Vac. Sci. Technol. B 7, 1155 (1989).CrossRefGoogle Scholar
14. Le Berre, M., Lemiti, M., Pinard, P., Bustarret, E., Grieshaber, W., Bruyère, J.-C. and Brunei, M., Mat. Res. Soc. Symp. Proc. 283, 573 (1993).Google Scholar
15. Akasaka, T., Araki, Y., Nakata, M. and Shimizu, I., Jpn. J. Appl. Phys. 32, 2607 (1993).Google Scholar
16. Shen, D.S. and Bhat, P.K., Solar Energy Materials and Solar Cells 30, 139 (1993).Google Scholar
17. Wang, C., Parsons, G.N., Kim, S.S., Buehler, E.C., Nemanich, R.J. and Lucovsky, G., Mat. Res. Soc. Symp. Proc. 192, 535 (1990).CrossRefGoogle Scholar