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Structural Studies of Microcrystalline Silicon Films Produced by Sputtering

Published online by Cambridge University Press:  21 February 2011

T. D. Moustakas ,
D. A. Weitz ,
E. B. Prestridge  and
R. Friedman
T. D. Moustakas
Affiliation:
Exxon Research and Engineering Co. Clinton Township, Annandale, N.J. 08801
D. A. Weitz
Affiliation:
Exxon Research and Engineering Co. Clinton Township, Annandale, N.J. 08801
E. B. Prestridge
Affiliation:
Exxon Research and Engineering Co. Clinton Township, Annandale, N.J. 08801
R. Friedman
Affiliation:
Exxon Research and Engineering Co. Clinton Township, Annandale, N.J. 08801
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Abstract

A number of microcrystalline silicon films have been deposited by RF sputtering and their structure was investigated by Raman spectroscopy, X-ray scattering, SEM, TEM and IR spectroscopy. The interpretation of these results suggests that the film growth proceeds initially via amorphous island formation and that the degree of crystallization of the final film depends on subsequent solid phase crystallization during the time of growth. The size and the preferred orientation of the crystallites correlates with the columnar growth habit of the films while the rest of the amorphous matrix is shown to exhibit a considerable degree of order.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 401
Copyright
Copyright © Materials Research Society 1985

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