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Structure, Characteristics, and the Application of Phosphorus Doped Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

S. J. Jeng ,
D. E. Kotecki ,
J. Kanicki ,
C. C. Parks  and
J. Tien
S. J. Jeng
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
D. E. Kotecki
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
J. Kanicki
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
C. C. Parks
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
J. Tien
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
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Abstract

The microstructure, electrical, and optical properties of in situ phosphorus doped hydrogenated macrocrystalline silicon (μc-Si:H:P) films are strongly affected by deposition parameters and subsequent thermal processes. μc-Si:H:P films with thickness ranging Trom 200 to lOOOÅ have been deposited on Si and SiO2 substrates. The μc-Si:H:P film is best deposited at 200°C in terms of structure, and H and P content. In this film, microcrystallites arc embedded in an amorphous matrix and have a volume fraction of ≃85%. The band-gap of the film is 1.8 eV. In this paper, the materials and processing issues of μc-Si:H:P deposited in a parallel plate RF plasma and in a downstream RF plasma chemical deposition reactor have been studied using HRTEM, SIMS, electrical, and optical measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 693
Copyright
Copyright © Materials Research Society 1992

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References

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