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Studies of Charge Collection in GaAs Radiation Detectors

Published online by Cambridge University Press:  21 February 2011

K Berwick
Affiliation:
Centre for Electronic Materials, UMIST, Manchester, M60 1AD, UK
M R Brozel
Affiliation:
Centre for Electronic Materials, UMIST, Manchester, M60 1AD, UK
C M Butiar
Affiliation:
Dept. of Physics, University of Sheffield, Sheffield, S3 7RH, UK
M Cowperthwaite
Affiliation:
Centre for Electronic Materials, UMIST, Manchester, M60 1AD, UK
Y Hou
Affiliation:
Dept. of Physics, University of Sheffield, Sheffield, S3 7RH, UK
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Abstract

The behaviour of the charge collection efficiency of particle detectors fabricated from Semi-Insulating (SI) Liquid Encapsulated Czochralski (LEC) GaAs as a function of applied bias is investigated for alpha particles and it is shown that it cannot be explained by simple models that assume a uniform electric field across the detector. To investigate this the electric field within the SI GaAs has been studied. We have attempted to correlate the measured charge collection efficiency with the observed field distributions. Some correlation is found but other effects may also be present.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Bertin, R. at al, Nucl. Instr. Meth., A294, 211, 1990; C.M.Buttar et al, Nucl. Instr. Meth., A310, 1991; K.W.Benz et al, Nucl. Instr. Meth. A322, 493 1992; T.J. Sumner et al, Nucl. Instr. Meth. A322, 514, 1992CrossRefGoogle Scholar
2 McGregor, D.S. et al. , IEEE Trans. Nucl. Sci., 39, 1226, 1992 CrossRefGoogle Scholar
3 Cavalleri, G et al. , Nucl. Instr. Meth., 92, 137, 1971 CrossRefGoogle Scholar
4 Oda, O. et al. , Semicond. Sci. Technol. A215, 7, 1992 Google Scholar
5 McMath, T.A. and Martini, M., Nucl. Instr. Meth. 86, 245, 19CrossRefGoogle Scholar
6 Sze, S.M., Semiconductor Devices: Physics and Technology, pub. John Wiley, New York, 239, 1985 Google Scholar
7 Moss, T.S., J. Appl. Phys., 32, 2136, 1961 CrossRefGoogle Scholar
8 Brozel, M.R., Grant, I., Ware, R.M. and Stirland, D.J., Appl. Phys. Lett., 42, 610, 1983 CrossRefGoogle Scholar
9 Beaumont, S. et al. , Proc. III nt. Conf. Adv. Tech. and Particle Physics, Como, Italy, 1992, to be publishedGoogle Scholar
10 Northrop, D.C. et al. , Solid State Electronics, 7, 17 1964 CrossRefGoogle Scholar
11 Kaminska, M et al. , Appl Phys Lett, 41, 989, 1982 CrossRefGoogle Scholar