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Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE

Published online by Cambridge University Press:  10 February 2011

A. Y. Polyakov ,
A. V. Govorkov ,
N. B. Smirnov ,
M. Shin ,
M. Skowronski  and
D. W. Greve
A. Y. Polyakov
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
A. V. Govorkov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
N. B. Smirnov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
M. Shin
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
M. Skowronski
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

Deep centers were studied in GaN samples grown by organometallic vapor phase epitaxy (OMVPE). Electron traps 0.2 eV and 0.5 eV below conduction band edge and 0.25 eV and 0.50.85 eV above the valence band edge were detected by means of deep levels transient spectroscopy (DLTS), photoelectron relaxation spectroscopy (PERS) and thermally stimulated current spectroscopy (TSC). The photoconductivity at low temperature is shown to be persistent and the magnitude of photosensitivity is dependent on the way the samples are grown. Microcathodoluminescence (MCL) and electron beam induced current (EBIC) measurements indicate that the density of deep recombination centers near the dislocation walls between the misoriented GaN domains is lower than inside the domains. Spatially resolved PERS measurements show that the concentration of the 0.85 eV level is higher in the low angle grain boundary regions that produce bright contrast in EBIC and MCL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 591
Copyright
Copyright © Materials Research Society 1997

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References

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