Published online by Cambridge University Press: 15 February 2011
We studied a lattice distortion and relaxation of BaTiO3(BT) thin films grown on SrTiO3 (001) substrates(ST) by a molecular beam epitaxy method using an oxygen radical source RT were prepared by alternately deposition of BaO and TiO2 layers, and the structure of the thin films was evaluated by X-ray diffraction, reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, coaxial impact collision ion scattering spectroscopy and X-ray photoelectron spectroscopy The lattice constants of the films varied with distance from the interface of BT and ST It was found that lattice distortion and relaxation of BT On the other hand, the surface analysis indicated that adsorbed oxygen was enriched on the BaO-terminated surface in comparison with the TiO2-terminated surface Then we proposed new mechanism of BT thin film growth with adsorbed oxygen.