Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-28T19:56:41.959Z Has data issue: false hasContentIssue false

Study of crystalline structure N-doped GeSb Phase Change Material for PCRAM applications

Published online by Cambridge University Press:  01 February 2011

Audrey Bastard
Affiliation:
audrey.bastard@cea.fr, CEMES, Toulouse, France
Sandrine Lhostis
Affiliation:
sandrine.lhostis@st.com, ST, Crolles, France
Caroline Bonafos
Affiliation:
bonafos@cemes.fr, CEMES, Toulouse, France
Sylvie Schamm-Chardon
Affiliation:
schamm@cmes.fr, CEMES, Toulouse, France
Pierre-Eugène Coulon
Affiliation:
pierre-eugene.coulon@polytechnique.edu, CEMES, Toulouse, France
Frederic Fillot
Affiliation:
frederic.fillot@cea.fr, CEA, Grenoble, France
Giada Ghezzi
Affiliation:
giada.ghezzi@cea.fr, CEA, Grenoble, France
Andrea Fantini
Affiliation:
andrea.fantini@cea.fr, CEA, Grenoble, France
Luca Perniola
Affiliation:
luca.perniola@cea.fr, CEA, Grenoble, France
Sebastien Loubriat
Affiliation:
sebastien.loubriat@cea.fr, CEA, Grenoble, France
Anne Roule
Affiliation:
anne.roule@cea.fr, CEA, Grenoble, France
Emmanuel Gourvest
Affiliation:
emmanuel.gourvest@cea.fr, CEA, Grenoble, France
Edrisse Arbaoui
Affiliation:
edrisse.arbaoui@cea.fr, CEA, Grenoble, France
Alain Fargeix
Affiliation:
alain.fargeix@cea.fr, CEA, Grenoble, France
Marilyn Armand
Affiliation:
marilyn.armand@cea.fr, CEA, Grenoble, France
Berangere Hyot
Affiliation:
berangere.hyot@cea.fr, CEA, Grenoble, France
Sylvain Maitrejean
Affiliation:
sylvain.maitrejean@cea.fr, CEA, Grenoble, France
Véronique Sousa
Affiliation:
veronique.sousa@cea.fr, CEA, Grenoble, France
Get access

Abstract

100 nm-thick GeSbN films with high Sb content were investigated by XRD and TEM in order to investigate crystalline phases. We observe the crystallization of the two phases separatly. First, Sb rhomboedral crystallizes at 250°C and then cubic Ge appears at 340°C according to Reflectivity and X-Ray Diffraction measurements. With the incorporation of nitrogen in the thick films, a delay to crystallization of the two phases is observed. Grain size measurements with Scherrer formula support the decrease of grain crystallization with N content. Moreover, TEM observations show clearly the separation of the two phases in the layer and the reduction in size of the grains with nitrogen content. This allows a better re-amorphization than films without nitrogen.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Raoux, S. and al., Phase Change Materials and their application to non-volatile memories Chem.Rev., 110, 240267 (2010)Google Scholar
2 Philips: JJAP Vol.43, N°7B, 2004, pp. 49744977 Google Scholar
3 Siegel, J. and al., Applied Physics Letters, 72, 20, 31023105 (1999)Google Scholar
4 Chen, Y.C. and al., IEDM 06 International (2006)Google Scholar
5 Lee, H.S. and al., EPCOS2008 Google Scholar
6 Kim, S.M. and al., Thin solid Films 469–470 (2004) 322 Google Scholar
7 Cabral, C. and al, Applied Physics Letters 93, 071906 (2008)Google Scholar
8 Jeong, T.H. and al, Jpn. J. Appli. Phys. 39, 2775 (2000)Google Scholar
9 Kojima, R. and al., Jpn. J. Appli. Phys. 37, 2098 (1998)Google Scholar
10 Kojima, R. and al., Proc. SPIE Int. Soc. Opt. Eng. 3401, 14 (1998)Google Scholar