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A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

Published online by Cambridge University Press:  31 January 2011

Yongkun Sin ,
Nathan Presser ,
Neil Ives  and
Steven C. Moss
Yongkun Sin
Affiliation:
yongkun.sin@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Nathan Presser
Affiliation:
nathan.presser@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Neil Ives
Affiliation:
neil.ives@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Steven C. Moss
Affiliation:
steven.c.moss@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
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Abstract

Degradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

Keywords

III-Vlaseroptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B01-06
Copyright
Copyright © Materials Research Society 2010

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References

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