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Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs

Published online by Cambridge University Press:  26 February 2011

J. L. Bradshaw ,
W. J. Choyke ,
Z. C. Feng ,
D. L. Meier  and
R. L. Messham
J. L. Bradshaw
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
W. J. Choyke
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
Z. C. Feng
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
D. L. Meier
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
R. L. Messham
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
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Abstract

Various thicknesses of AlGaAs are grown on GaAs substrates by MOCVD. Low temperature photoluminescence of the substrate is observed even for layers of AlGaAs 24μm thick. Direct excitation by the 488.0 nm pumping radiation and excitation by reradiation from the AlGaAs are eliminated as causes. From photoluminescence and EBIC studies, evidence is given to show that the substrate luminescence is caused by a much larger than expected electron diffusion length. A small trace of GaAs luminescence may be due to alloy segregation in the AlGaAs films themselves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 595
Copyright
Copyright © Materials Research Society 1988

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References

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