Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-29T23:59:05.103Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Dose and Dose Rate in the Implantation of Nitrogen Isotopes Into Si(100)

Published online by Cambridge University Press:  28 February 2011

F. Namavar ,
J.I. Budnick ,
A. Fasihuddin ,
F. H. Sanchez  and
H. C. Hayden
F. Namavar
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
J.I. Budnick
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
A. Fasihuddin
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
F. H. Sanchez
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
H. C. Hayden
Affiliation:
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, CT 06268.
Get access

Abstract

In this paper we address the issue of the dependence of Si3N4 formation on dose dose rate, and target temperature for high dose (up to 3 X 1018 N/cm2) implantation of nitrogen isotopel into Si targets. RBS results for high current (I≈ 30μ/cm2) and room temperature nitrogen implantations indicate that the nitrogen profile and the reduction of the backscattering signal from Si generally appear to be Gaussian. The nitrogen concentration exceeds Si3N4 stoichiometry at the higher doses. Read Camera results indicate the formation of polycrystalline α-Si3N4 and polycrystalline silicon for samples implanted at room temperature and annealed at 1200°C for 2 hours in a 10 Torr vacuum system. For samples implanted at 350 °C and annealed, there is evidence of crystalline α-Si3N4 with fiber texture structure.

For low current (〈1 °A/cm2) and room temperature implantation, RBS indicates the formation of a layer whose N/Si ratio is the same as that of Si3N4. Furthermore, the nitrogen profile and the reduction of the Si backscattering signal appear flat. These results suggest that a uniform layer of Si3N4 can be produced providing the supply of nitrogen does not exceed the diffusion rate of nitrogen in compounds formed during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 281
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

On a fellowship from CONICET, Republica Argentina.

References

REFERENCES

(1) Dexter, R.J., Watelski, S.B. and Picraux, S.T., Appl. Physics Lett. 23 (1973) 455.Google Scholar
(2) Bourguet, P., Dupart, J.M., E. Le Tiran, Auvray, P., Guivarch, A., Salvi, M., Pelous, G. and , Henoc, J. Appl. Phys. 51 (1980) 6169.Google Scholar
(3) Kressig, U., Bkorupa, W. and , Hensel, Thin Solid Films 100 (1983) L25.Google Scholar
(4) Mayeama, S. and Kajiyama, K., Japanese Journal of Applied Physics, Vol. 21, No. 5, (1982) 744.Google Scholar
(5) Hemment, P.L.F., Deart, R.F., Yao, M.F., Stephens, K.G., Arrowsmith, R.P., Charter, R.J., Kilner, J.A., Nucl. Inst. Meth. B6 (1985) 292.Google Scholar
(6) Hemment, P. L. F. et al, Applied Physics Letters 49, no. 10, (1985), 952.Google Scholar
(7) Tekaat, E.H. and Belz, J., Mat. Res. Symp. Proc., Vol. 45(1985) 329.Google Scholar
(8) Kilner, J.A., Charter, R.J., Hemment, P.L.F., Peart, R.F., Reeson, K.J., Arrowsmith, R.P. and Davis, Jr., 7th Int. Conf. Ion Beam Analysis, Berlin 7-12 July 1985.Google Scholar
(9) Namavar, F., Budnick, J.I., Sanchez, F.A. and Hayden, H.C., Mat. Res. Symp., Vol. 45, (1985) 317 and this proceeding.Google Scholar
(10) Kreissig, U. et al., Thin Solid Films 98, (1982), 229.Google Scholar