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Study of Electrochemical Deposition of Copper and Microstructure Evolution in Fine Lines

Published online by Cambridge University Press:  10 February 2011

Stephan Grunow ,
Deda Diatezua ,
Soon-Cheon Seo ,
Timothy Stoner  and
Alain E. KaloyerosI
Stephan Grunow
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, NY 12222
Deda Diatezua
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, NY 12222
Soon-Cheon Seo
Affiliation:
Current address: IBM Microelectronics Division, Hopewell Junction, NY 12533
Timothy Stoner
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, NY 12222
Alain E. KaloyerosI
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, NY 12222
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Abstract

As computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999 , 243
Copyright
Copyright © Materials Research Society 1999

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References

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