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Study of electron beam irradiation induced defectivity in mono and bi layer graphene and the influence on Raman band position and line-width

Published online by Cambridge University Press:  31 January 2011

Gayathri Rao ,
Sarah Mactaggart ,
Ji Ung Lee  and
Robert Geer
Gayathri Rao
Affiliation:
grao@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Sarah Mactaggart
Affiliation:
smactaggart@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Ji Ung Lee
Affiliation:
jlee1@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Robert Geer
Affiliation:
rgeer@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
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Abstract

Nanoscale metrology of graphene-based devices is a substantial challenge. The investigation of defects and stacking order is essential for graphene-based device development. Raman spectroscopy is a useful approach in this regard. The defect-induced Raman D band yields substantial insights regarding defect density and, consequently, can serve as in important tool to quantify impact of defects on eventual graphene-based device performance. Toward this end an investigation of electron beam-induced defects in bi-layer and mono layer graphene samples has been undertaken via the examination of the Raman D, and G bands. The evolution of the aforementioned Raman spectra as a function of electron beam dose was characterized via Raman spectroscopy and compared with spectra from the same samples prior to irradiation. Defect generation in the graphene as a function of electron beam dose was characterized via the change in the intensity ratios of the Raman D and G bands (ID/IG) and the broadening of the G band line width. Continued irradiation at very high flux and very low accelerating voltages have also revealed charge accumulation evident from the narrowing of G band line-widths.

Keywords

Raman spectroscopydefectselectron irradiation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1184: Symposium GG – Electron Crystallography for Materials Research and Quantitive Characterization of Nanostructured Materials , 2009 , 1184-HH03-07
Copyright
Copyright © Materials Research Society 2009

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