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A Study of Electronic Defects in Hydrogenated Amorphous Silicon Prepared by the Expanding Thermal Plasma Technique

Published online by Cambridge University Press:  01 February 2011

Steve Reynolds ,
Charlie Main ,
Ivica Zrinscak ,
Zdravka Aneva  and
Diana Nesheva
Steve Reynolds
Affiliation:
G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, Boul. Tzarigradsko chaussee 72, Sofia 1784, Bulgaria.
Charlie Main
Affiliation:
G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, Boul. Tzarigradsko chaussee 72, Sofia 1784, Bulgaria.
Ivica Zrinscak
Affiliation:
G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, Boul. Tzarigradsko chaussee 72, Sofia 1784, Bulgaria.
Zdravka Aneva
Affiliation:
School of Computing and Advanced Technologies, University of Abertay Dundee, Bell Street, Dundee, U.K.
Diana Nesheva
Affiliation:
School of Computing and Advanced Technologies, University of Abertay Dundee, Bell Street, Dundee, U.K.
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Abstract

The electronic properties of amorphous silicon films prepared by the expanding thermal plasma technique have been studied using steady-state and transient photoconductivity measurements. It is found that films deposited at a substrate temperature of 400°C have a conduction band tail slope of 29 meV, deep defect density of order 3×1016 cm-3, an Urbach tail slope of 65 meV, defect absorption of 5-10 cm-1, and a mobility-lifetime product of 1.3×10-7 cm2 V-1. Aslight increase in defect density and reduction in mobility-lifetime product is observed on moderate light-soaking. The overall optoelectronic quality is somewhat poorer than commercial PECVD material, but there is scope for improvement as deposition conditions are further optimised.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A19.14
Copyright
Copyright © Materials Research Society 2003

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References

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