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A Study of Epitaxial Relations of CaF2 Films Grown on (111) Silicon by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

H.Y. Liu  and
C.C. Cho
H.Y. Liu
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P.O. Box 655936, MS 147, Dallas, TX 75265
C.C. Cho
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P.O. Box 655936, MS 147, Dallas, TX 75265
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Abstract

When preparing single-crystal films of CaF2 on (111) oriented silicon by molecular beam epitaxy (MBE), we found that these dielectric films grew into either A or B type depending on the substrate temperature during growth. A-type films follow the same orientation as that of the substrate silicon, while B-type films rotate 180° about the surface normal with respect to the substrates.

X-ray diffraction (XRD) confirms the single crystallinity and identifies the epitaxial relationships between the film and the substrate. Epitaxial CaF2 films were obtained at growth temperatures ranging from 200°C to 800°C. Employing the asymmetric x-ray diffraction of atomic planes inclined to the sample surface, we found that A-type CaF2 grows at lower substrate temperatures, while B-type films dominate at higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 111
Copyright
Copyright © Materials Research Society 1991

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References

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