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Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates

Published online by Cambridge University Press:  01 February 2011

Byron Ho ,
Reinaldo Vega  and
Tsu-Jae King-Liu
Byron Ho
Affiliation:
bho@eecs.berkeley.edu, University of California at Berkeley, EECS, Berkeley, California, United States
Reinaldo Vega
Affiliation:
orion@eecs.berekeley.edu, University of California at Berkeley, EECS, Berkeley, California, United States
Tsu-Jae King-Liu
Affiliation:
tking@eecs.berkeley.edu, University of California at Berkeley, EECS, Berkeley, California, United States
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Abstract

LPCVD Ge films are deposited onto bulk Si substrates and subjected to either a rapid thermal anneal (RTA) or furnace anneal (FA) at a temperature that is higher than the melting point of Ge in an attempt to induce epitaxial recrystallization. Spiking into the Si and voids in the Ge film are observed after the anneal. This is attributed to defect-assisted Ge diffusion into the Si substrate caused by strain at the Ge-Si interface. Simple diffusion theory using published diffusivity values predicts diffusion depths similar to the spiking depths observed by scanning electron microscopy and transmission electron microscopy. Approaches to reduce the strain at the interface are explored. It is found that the quasi-equilibrium nature of FA reduces spiking and that there is an area dependence. Grazing-incidence x-ray diffraction analysis suggests that this technique for epitaxial recrystallization does not result in single-crystalline Ge.

Keywords

Gechemical vapor deposition (CVD) (deposition)rapid solidification
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I07-03
Copyright
Copyright © Materials Research Society 2010

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