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Study of Microstructure and Gas Sensing Properties of tin Oxide thin Films Prepared by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Sang Woo Lee ,
Donihang Liu ,
Ping P. Tsai  and
Haydn Chen
Sang Woo Lee
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
Donihang Liu
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
Ping P. Tsai
Affiliation:
Industrial Technology Research Institute, Materials Research Laboratories, Taiwan ROC
Haydn Chen
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
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Abstract

Tin oxide (SnO2) thin films were deposited on polycrystalline alumina (A12O3) substrates using metal organic chemical vapor deposition (MOCVD) technique at the growth temperature of 600°C. X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were applied for the microstructure characterization of the films. The films were subjected to sensing tests under 1% H2 environment by monitoring changes in the electrical resistance of the films at elevated temperatures. There is a trend to exhibit sensor temperature characteristic in the deposited thin films which show a local maximum in the electrical resistance curve as a function of ambient temperature. The local maximum occurred at a relatively higher temperature than found in bulk sintered ceramics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 237
Copyright
Copyright © Materials Research Society 1996

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References

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