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A Study of Phase Transition Behaviors of Chalcogenide Layers Using In-situ AC Impedance Spectroscopy

Published online by Cambridge University Press:  11 July 2011

Yin-Hsien Huang ,
Yu-Jen Huang  and
Tsung-Eong Hsieh
Yin-Hsien Huang
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hseuh Road, Hsinchu, Taiwan 30010, R.O.C.
Yu-Jen Huang
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hseuh Road, Hsinchu, Taiwan 30010, R.O.C.
Tsung-Eong Hsieh
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hseuh Road, Hsinchu, Taiwan 30010, R.O.C.
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Abstract

The electrical properties of chalcogenide thin films, both pristine Ge2Sb2Te5 (GST) and cerium-doped GST (Ce-GST), were investigated by in-situ AC impedance spectroscopy. In conjunction with the brick layer model, the contributions of both the grain and the grain boundary to the phase-transition behaviors of chalcogenide samples could be distinguished; the results illustrated the dominance of the grain boundary in the phase transition process. Moreover, impedance analysis applied to characterize the effects of doping on the phase-transition kinetics yielded results similar to those obtained by conventional methods. Therefore, in-situ AC impedance spectroscopy is a feasible tool for analyzing the phase transitions of chalcogenides.

Keywords

memoryphase transformationelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1338: Symposium R – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2011 , mrss11-1338-r03-08
Copyright
Copyright © Materials Research Society 2011

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References

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