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Study of Temperature and Light Bias Effects on the Occupied Near Surface Defect Density in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Samer Aljishi ,
J. David Cohen  and
Lothar Ley
Samer Aljishi
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
J. David Cohen
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
Lothar Ley
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany.
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Abstract

The occupied density of states distributions in doped and undoped a-Si:H are investigated. Results reveal the presence of a distinct defect sub-band at 0.6 eV above the valence band edge Ey in n-type and in undoped films. In p-type films, this band is absent. Instead, a new band centered at 0.8 eV above Ev develops. This band is normally unoccupied and is therefore only seen under non-equilibrium conditions. A sub-band at this energy is also discovered in undoped a-Si:H films. The effects of temperature and light bias on these defect sub-bands are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 757
Copyright
Copyright © Materials Research Society 1990

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References

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