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Study of the Deep Levels of a GaAs/p-GaAs1−xBix Heterostructure Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 May 2012

Takuma Fuyuki ,
Shota Kashiyama ,
Kunishige Oe  and
Masahiro Yoshimoto
Takuma Fuyuki
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto, 606-8585, Japan
Shota Kashiyama
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto, 606-8585, Japan
Kunishige Oe
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto, 606-8585, Japan
Masahiro Yoshimoto
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto, 606-8585, Japan
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Abstract

Deep-level densities of p-GaAs1−xBix and at the GaAs/p-GaAs1−xBix heterointerface have been shown to be sufficiently low for device applications based on the results of deep-level transient spectroscopy, isothermal capacitance transient spectroscopy and admittance spectroscopy. Although the metastable alloy of GaAs1−xBix is grown by molecular beam epitaxy at low temperature (370 °C), the deep-level density of p-GaAs1−xBix is suppressed such that it is on the order of 1015 cm−3. The state density at the heterointerface was determined to be 8 · 1011 cm−2eV−1, which is comparable to other III–V heterointerfaces formed at high temperatures. The surfactant-like effect of Bi is believed to prevent defect formation during low-temperature growth.

Keywords

molecular beam epitaxy (MBE)defectsBi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g01-07
Copyright
Copyright © Materials Research Society 2012

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