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Study of the Si/ZnS Multilayer System for Optoelectronic Applications

Published online by Cambridge University Press:  10 February 2011

L. C. Lew Yan Voon
L. C. Lew Yan Voon*
Affiliation:
Department of Physics, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609
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Abstract

The suitability of the (001) Si/ZnS system for optoelectronic applications is theoretically investigated and compared to the Si/Ge system. The band-structure calculations show that Si/ZnS is superior to Si/Ge in a number of respects: directness of band gap can be easily obtained; and optical intersubband transitions fall within the important 1.3–1.6 μm window.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 367
Copyright
Copyright © Materials Research Society 1998

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