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Study of the Yielding and Strain Hardening Behavior of a Copper Thin Film on a Silicon Substrate Using Microbeam Bending

Published online by Cambridge University Press:  18 March 2011

Jeffrey N. Florando
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
William D. Nix
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Recently a new microbeam bending technique utilizing triangular beams was introduced. For this geometry, the film on top of the beam deforms uniformly when the beams are deflected, unlike the standard rectangular geometry in which the bending is concentrated at the support. The yielding behavior of the film can be modeled using average stress-strain equations to predict the stress-strain relation for the film while attached to its substrate. This model has also been used to show that the gradint of stress and strain through the thickness of the film, which occurs during beam bending, does not obscure the measurement of the yield stress in our analysis.

Utilizing this technique, the yielding and strain hardening behavior of bare Cu thin films has been investigated. The Cu film was thermally cycled from room temperature to 500 °C, and from room temperature to –196°C. The film was tested after each cycle. The thermal cycles were performed to examine the effect of thermal processing on the stress-strain behavior of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Nix, W.D., Scripta Materialia 39, 545 (1998).Google Scholar
2. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. on Electr. Dev. 34, 689 (1987).Google Scholar
3. Keller, R.M., Baker, S.P., and Arzt, E., Acta Materialia 47, 415 (1999).Google Scholar
4. Weihs, T.P., Hong, S., Bravman, J.C. and Nix, W.D., J. Mater. Res. 3, 931 (1988).Google Scholar
5. Baker, S.P. and Nix, W.D., J. Mater. Res. 9, 3131 (1994).Google Scholar
6. Florando, J., Fujimoto, H., Ma, Q., Kraft, O., Schwaiger, R., and Nix, W.D. in Materials Reliability in Microelectronic IX, (Mater. Res. Soc. Proc. 353, Pittsburgh, PA, 2000) pp. 231236.Google Scholar
7. Clemens, B.M. and Bain, J.A., MRS Bull. 17, 46 (1992).Google Scholar
8. Leung, O.S., Studies of Strengthening Mechanisms in Thin Gold Films, Ph.D. Dissertation, Stanford University, (2001).Google Scholar
9. MacDowell, A. A., Chang, C. H., Padmore, H.A., Patel, J. R., and Thompson, A. C. in Applications of Synchrotron Radiation Techniques to Materials Science IV, (Mater. Res. Soc. Proc. 524, Pittsburgh, PA, 1998) pp. 5558.Google Scholar