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Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

Published online by Cambridge University Press:  01 February 2011

Shuangbao Wang ,
Hong Liang  and
Peiran Zhu
Shuangbao Wang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PRC.
Hong Liang
Affiliation:
Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100080, PRC.
Peiran Zhu
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PRC.
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Abstract

β-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V5.4
Copyright
Copyright © Materials Research Society 2002

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