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Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

Published online by Cambridge University Press:  01 February 2011

Seung-woo Do ,
Byung-Ho Song ,
Ho Jung ,
Seong-Ho Kong ,
Jae-Geun Oh ,
Jin-Ku Lee ,
Min-Ae Ju ,
Seung-Joon Jeon ,
Ja-Chun Ku  and
Yong-Hyun Lee
Seung-woo Do
Affiliation:
dsw95@ee.knu.ac.kr, Kyungpook National University, School of Electrical Engineering and Compter Science, 1370, Sankyuk-dong, Buk-gu, Daegu, 702-701, Korea, Republic of
Byung-Ho Song
Affiliation:
hoya602@nate.com, Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu, 702-701, Korea, Republic of
Ho Jung
Affiliation:
hozi@ee.knu.ac.kr, Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu, 702-701, Korea, Republic of
Seong-Ho Kong
Affiliation:
shkong@knu.ac.kr, Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu, 702-701, Korea, Republic of
Jae-Geun Oh
Affiliation:
jaegeun.oh@hynix.com, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, Republic of
Jin-Ku Lee
Affiliation:
jinku.lee@hynix.com, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, Republic of
Min-Ae Ju
Affiliation:
minae.ju@hynix.com, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, Republic of
Seung-Joon Jeon
Affiliation:
seungjoon.jeon@hynix.com, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, Republic of
Ja-Chun Ku
Affiliation:
jachun.ku@hynix.com, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, Republic of
Yong-Hyun Lee
Affiliation:
yhlee@ee.knu.ac.kr, Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu, 702-701, Korea, Republic of
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Abstract

Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Keywords

dopantsecondary ion mass spectroscopy (SIMS)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E03-06
Copyright
Copyright © Materials Research Society 2008

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References

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