Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-10T08:59:52.375Z Has data issue: false hasContentIssue false
  • English
  • Français

Study on the Phase Transition from Amorphous Phases to Crystalline TiSi2

Published online by Cambridge University Press:  15 February 2011

H. G. Nam  and
Nam-Ihn Cho
H. G. Nam
Affiliation:
Department of Electronic Engineering, Sun Moon University, 100 Galsan-ri, Tangjeong-myun, Asan, Choongnam, Republic of Korea 337-840
Nam-Ihn Cho
Affiliation:
Department of Electronic Engineering, Sun Moon University, 100 Galsan-ri, Tangjeong-myun, Asan, Choongnam, Republic of Korea 337-840
Get access

Abstract

Titanium silicides were prepared by coevaporation of Ti and Si on Si substrates at intermediate substrate temperatures followed by high temperature annealing. Depending on the deposition conditions, transmission electron diffraction analyses revealed two different halo patterns from the as-deposited samples. Variations in the deposition conditions included substrate temperature, deposition rate, and film thickness. Radial distribution functions were calculated to estimate the short range ordering of the amorphous phases. The interatomic distances of all the titanium silicide compounds were also calculated in order to compare them with the atomic ordering of amorphous phases. Phase transition from these amorphous phases to the first crystalline silicide is discussed in terms of kinetic variations as well as the atomic ordering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 15
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cho, N. and Nam, H. G., Mat. Res. Soc. Symp. Proc. 311, 347 (1993)Google Scholar
2. Nam, H. G., Chung, I., and Bene, R. W., J. Appl. Phys. 71 (11), 5460 (1992)Google Scholar
3. Wang, M. H. and Chen, L. J., Appl. Phys. Lett. 58, 463 (1991)Google Scholar
4. Nam, H. G., Chung, I., and Bene, R. W., Thin Solid Films, 227, 153 (1992)Google Scholar
5. Bean, J. C., Becker, G. E., Petroff, P. M., and Seidel, T. E., J. Appl. Phys. 48, 907 (1977)Google Scholar
6. Nandra, S. S. and Grundy, P. J., J. Phys. F, 7 (2), 207 (1977)Google Scholar
7. Edington, J. W., Practical Electron Microscopy in Materials Science, N. V. Philips' Gloeiamppenfabrieken, Eindhoven, 1975 Google Scholar
8. Gong, S. F., Robertsson, A., Hentzell, H. T. G., and Li, X. H., J. Appl. Phys. 68 (9), 4535 (1990)Google Scholar
9. Villars, P. and Calvert, L. D., Pearson's Handbook of Crystallographic Data for Intermetallic Phases, American Society for Metals, Metals Park, Ohio, 1985 Google Scholar
10. Bene, R. W., J. Appl. Phys. 61 (5), 1826 (1987)Google Scholar
11. Tung, R. T., Gibson, J. M., and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983)Google Scholar
12. Langer, J. S., Rev. Mod. Phys. 52 (1), 1 (1980)Google Scholar