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Study on Ti-SiO2 Reaction - Thermodynamic Approach

Published online by Cambridge University Press:  15 February 2011

M. B. A. Fontes ,
J. D. T. Capocchi  and
J. C. Acquadro
M. B. A. Fontes
Affiliation:
Laboratório de Sistemas Integráveis - PEE/EPUSP and University of Pennsylvania - EE/UPENN (USA)
J. D. T. Capocchi
Affiliation:
Departamento de Metalurgia e Materiais - PMT/EPUSP
J. C. Acquadro
Affiliation:
Departamento de Física Nuclear - IFUSP - Universidade de São Paulo (Brazil).
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Abstract

Interactions between Ti and SiO2 thin films have been studied in self-aligned transistor process in the MOS Integrated Circuits Technology. A thermodynamic study of this interaction was conducted on the titanium and silicon dioxide chemistry. The Gibbs free energy was analyzed in the 25 to 1000°C range and it was concluded that the 11/3 Ti + SiO2 --> 1/3 Ti5 Si3 + 2 Ti reaction has the lowest free energy. Ti thin films were deposited by sputtering over dry silicon oxide and then sintered in atmospheric pressure furnace - RTP at argon ambient. The samples were analyzed by X-RAY Diffraction (XRD), Rutherford Backscatering Spectroscopy (RBS) and fourpoint- probe resistivity measurements. It was showed that experimental results can be modeled by theoretical analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 27
Copyright
Copyright © Materials Research Society 1996

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References

1. Ting, C.Y. Use of TISI2 for self aligned silicide technology. IBM Journal of Research and Development, p. 48– 56, s.d.Google Scholar
2. Porter, D.A.; Easterling, K.E. Termodynamics and phase diagrams IN: Transformations in Metals and Alloys, cap. 1Google Scholar
3. Swalin, R.A. Thermodynamics of Solids, New York, Wiley, 2 ed.1972 Google Scholar
4. R.E., Reed-Hill Princípios de Metalurgia Física. 2.ed. México, Compañia Editorial Continental, S.A. de C.V., 1986.Google Scholar
5. Prince, A. Alloy Phase Equilibria, Elsevier, London, 1966.Google Scholar
6. Rhines, F.N. Phase Diagrams in Metallurgy, McGraw-Hill, New York, 1956.Google Scholar
7. Kubaschewski, O.; Alcock, C.B. Metallurgical Thermochemistry, Pergamon Press, 1979.Google Scholar
8. Nicolet, Marc-A; Lau, S.S. VLSI Electronics: Microstructure Science. IN: Formation and Characterization of Transition - Metal Silicides. Chapter 6. New York, Academic Press, Inc., 1983.Google Scholar
9. Pretorius, R. et al. Thin film compound phase formation sequence: an effective heat of formation model IN: Materials Science & Engineering. Reports, v.10, n.l-2, p. 64–83, July. 1993.Google Scholar
10. Schlesinger, M.E. Thermodynamics of solid transition-metal silicides. Chemical Review, v.90, p. 607–28, 1990.Google Scholar
11. Barin, I.; Knacke, O. Thermochemical Properties of Inorganic Substances, (Springer, 1977).Google Scholar
12. Smithells, Metal Reference Book, ed. Brandes, ed.6, 1983.Google Scholar
13. Touloukian, Y.S.; Buyco, E.H. Specific Heat, Nonmetallic solidsGoogle Scholar
14. Fontes, M.B.A. Estudo da Formação de Silicetos de Titânio sobre Dióxido de Silício por Co-Deposição., 1993, 194p. Dissertação (Mestrado) - Escola Politécnica, Universidade de São Paulo.Google Scholar
15. Ting, C.Y. et al. Interaction between Ti and SiC2 IN: VLSI SCIENCE AND TECHNOLOGY, Proceedings. Pennington, Electrochemical Society 1984, vol.84–7, p.397–408.Google Scholar
16. Morgan, A.E. et al. Interations of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing. Journal of Applied Physics, v.64, n.1, p.344–53, July. 1988.Google Scholar
17. Hsu, C.C. et al. Formation of silicides in the Ti, Ti (Ox) / Si (111), and Ti / SiO2 / Si (111) systems. Journal of Vacuum Science and Technology, v.5, n.4, p.1402–6, July./Aug. 1987.Google Scholar
18. Beyers, R. Thermodynamic consideration in refratory metal-silicon-oxygen system. Journal of Applied Physics, v.56, n.1, p. 147– 52 July.1984.Google Scholar