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Subband Recombination in a-Si:H

Published online by Cambridge University Press:  21 February 2011

S.Q. Gu  and
P.C. Taylor
S.Q. Gu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

Photoluminescence (PL) in a-Si:H has been studied as a function of excitation energy from above the gap down to well below the gap. Although the width of the PL peak shows no strong dependence on the excitation energy at low temperatures, the low energy tail of bandtail PL exhibits an approximately exponential drop with decreasing energy, I ≈ exp(hν/δE), where δE increases with decreasing excitation energy for excitation energy below about 1.65 eV. This behavior is attributed to the slow downward hopping of holes in the valence band tail that are generated below a thermalization threshold at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 771
Copyright
Copyright © Materials Research Society 1992

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References

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