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Sub-Boundary Formation and Suppression in Silicon films Recrystallized by Scanned Zone Melting

Published online by Cambridge University Press:  22 February 2011

Loren Pfeiffer ,
J. M. Gibson  and
T. Kovacs
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. Kovacs
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We observe that the formation of low angle grain boundaries (sub-boundaries) depends strongly on the thickness of the recrystallized Si film. The average lateral spacing between adjacent sub-boundaries increases from 40 μm for 4000Å films to 500 μm for unseeded Si films 30 μm thick. For seeded 30 μm Si films on 1.6 mm by 1.6 mm buried oxide islands, areas exceeding 1.0 mm by 1.0 mm have been recrystallized which are free of all sub-boundaries, but which contain dislocations in other configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 505
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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