Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-13T02:20:30.016Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate Influence on the Reversible and Irreversible Polarization Contributions in Ferroelectric Thin Films

Published online by Cambridge University Press:  21 March 2011

Dierk Bolten ,
Ulrich Böttger ,
Julio Rodriguez ,
Oliver Lohse ,
Michael Grossmann ,
Theodor Schneller  and
Rainer Waser
Dierk Bolten
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany
Ulrich Böttger
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany
Julio Rodriguez
Affiliation:
IFF, Research Center Juelich, Germany
Oliver Lohse
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany
Michael Grossmann
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany
Theodor Schneller
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany
Rainer Waser
Affiliation:
IWE II, RWTH Aachen University of Technology, D-52056, Germany IFF, Research Center Juelich, Germany
Get access

Abstract

In this contribution, the influence of different substrates and textures on the reversible and irreversible polarization in Pb(Zr,Ti)O3 (PZT) thin films will be presented. One possible scenario to explain the origin of the ferroelectric hysteresis is the notion that the domain walls move through a potential generated by their interaction with randomly distributed defects of the matrix. This potential then gives rise to reversible and irreversible changes in the ferroelectric polarization. The exact features of the interaction potential also depend on the stress state of the material which can be influenced by a suitable choice of the substrate.

To study the substrate influence, PZT thin films have been deposited on commercial Si wafers, MgO and SrTiO3 single crystals. Electrical characterization methods (hysteresis and small signal capacitance measurements) have been used to extract information on reversible and irreversible polarization contributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F8.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lines, M.E., Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials, Clarendon Press, Oxford, 1977 Google Scholar
[2] Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M.C. and Scott, J.F., Nature 374, 627 (1995)Google Scholar
[3] Scott, J.F. and Araujo, C.A., Science 246, 1400 (1989)Google Scholar
[4] Chikazumi, S., Charap, S.H., Physics of Magnetism (John Wiley & Sons, New York, 1964), p. 243 Google Scholar
[5] Yang, T.J., Gopalan, V., Swart, P.J., Mohideen, U., Phys. Rev. Lett. 82, 4106 (1999)Google Scholar
[6] Nakamura, T., Nakamura, H., Jap. J. Appl. Phys. 1, 253 (1962)Google Scholar
[7] Bolten, D., Böttger, U., Schneller, T., Lohse, O., Grossmann, M. and Waser, R., App. Phys. Lett. 77, 3830 (2000)Google Scholar
[8] Boser, O. and Beshers, D.N., Mat. Res. Soc. Symp. Proc. 82, 441 (1987)Google Scholar
[9] Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989)Google Scholar
[10] Lohse, O., Bolten, D., Grossmann, M., Waser, R., Hartner, W., and Schindler, G. in Ferroelectric Thin Films VI, edited by Treece, R. D., Jones, R. E., Foster, C. M., Desu, S. B., and Yoo, I. K.. (Mater. Res. Soc. Proc. 493, Warrendale, PA, 1998) pp. 267–278 Google Scholar
[11] Bolten, D., Lohse, O., Grossmann, M., Waser, R., Ferroelectrics 221, 251 (1999)Google Scholar
[12] Bolten, D., Böttger, U., Grossmann, M., Lohse, O. Kastner, M., Schindler, G. and Dehm, C. and Waser, R. in Ferroelectric Thin Films VIII, edited by Schwartz, R.W., Summerfelt, S.R., McIntyre, P.C., Miyasaka, Y., Wouters, D. (Mater. Res. Soc. Proc. 596, Warrendale, PA 1999)Google Scholar
[13] Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., Ulenaers, M.J.E. and Larsen, P.K., J. Appl. Phys. 78, 1926 (1995)Google Scholar
[14] Ogawa, T., Senda, A. and Kasanami, T., Jap. J. Appl. Phys. 30, 2145 (1991)Google Scholar