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Sulfide Passivation of III–V Seiconductors: Electrochemical Aspects

Published online by Cambridge University Press:  21 February 2011

V.V. Bessolov ,
M.M. Llebedev ,
E.E. Novikov  and
A.A. Ioffe
V.V. Bessolov
Affiliation:
Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg 194021, Russia
M.M. Llebedev
Affiliation:
Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg 194021, Russia
E.E. Novikov
Affiliation:
Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg 194021, Russia
A.A. Ioffe
Affiliation:
Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St.Petersburg 194021, Russia
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Abstract

A phenomenological model is proposed to describe sulfide passivatlon of the surfaces of III-V semiconductors as a process of charge transfer between a semiconductor and a passivating solution. The model assumes that formation of the passivating sulfide coat occurs as a result of oxidation of the semiconductor in a photoelectrochemical reaction. The growth rate of the passivating coat is determined by the rate at which electrons are transferred from the semiconductor into the solution as well as by the energy which binds atoms in the surface layer of the semiconductor and the heat evolving in the process. It is found that the growth rate of the coat is dependent upon conductivity type and doping level of the semiconductor, hydrogen ion exponent and concentration of the solution and, as well, the intensity of light incident upon the electrolyte/semiconductor interface. In terms of the model, passivation of different III-V semiconductors is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 175
Copyright
Copyright © Materials Research Society 1993

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References

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