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Suppression of Oxidation of an Epitaxial (100)ZrN Film on Si During the Deposition of Ir Film

Published online by Cambridge University Press:  21 March 2011

Sadayoshi Horii  and
Susumu Horita
Sadayoshi Horii
Affiliation:
Delegated from Kokusai Electric Co.,Ltd, Toyama, JAPAN
Susumu Horita
Affiliation:
Japan Advanced Inst. of Science and Technology, School of Material Science, Ishikawa, JAPAN
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Abstract

The epitaxial (100)ZrN film on the (100)Si substrate is oxidized during Ir film sputtering deposition on (100)ZrN/(100)Si structure. Although the oxidation could be suppressed somewhat by increasing the deposition rate of the Ir film, it was not enough. In order to suppress the oxidation completely, 10 pieces of 10 × 10 mm2 Zr metallic plates were circularly placed on the non-erosion area of the Ir disc target. Using this target, the oxidation of the ZrN film was suppressed perfectly. Also, by adjusting of the diameter of the placed Zr circle, the contamination caused by Zr to the Ir film is avoided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC4.2.1
Copyright
Copyright © Materials Research Society 2001

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