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Surface And Interface Study Of Pdcr/Sic Schottky Diode Gas Sensor Annealed At 425°C

Published online by Cambridge University Press:  10 February 2011

Liang-Yu Chen ,
Gary W. Hunter ,
Philip G. Neudeck  and
Dak Knight
Liang-Yu Chen
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Gary W. Hunter
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Philip G. Neudeck
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Dak Knight
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
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Abstract

The surface and interface properties of a Pd0.9Cr0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron spectroscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed PdxSi only in a very narrow interfacial region. After annealing for 250 hours at 425 °C, the surface of Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. PdxSi formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to deep interface region. A stable catalytic surface and a clean layer of Pd0.9Cr0.1 film are likely responsible for significantly improved device sensitivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 259
Copyright
Copyright © Materials Research Society 1998

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References

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