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Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc Layers

Published online by Cambridge University Press:  10 February 2011

D. D. Koleske ,
A. E. Wickenden ,
J. A. Freitas Jr ,
R. Kaplan  and
S. M. Prokes
D. D. Koleske
Affiliation:
Naval Research Laboratory, Electronic Science and Technology Division, Washington, D.C. 20375
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Electronic Science and Technology Division, Washington, D.C. 20375
J. A. Freitas Jr
Affiliation:
Naval Research Laboratory, Electronic Science and Technology Division, Washington, D.C. 20375
R. Kaplan
Affiliation:
Sachs/Freeman Assoc. Inc., 1401 McCormick Dr., Landover, MD 20785
S. M. Prokes
Affiliation:
Naval Research Laboratory, Electronic Science and Technology Division, Washington, D.C. 20375
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Abstract

An empirical relationship linking surface energy to bulk modulus is presented which suggests that the thermodynamic growth mode for heteroepitaxy on compliant substrates should be 3-D. As an example of this behavior, GaN growth on Sc is shown for various growth conditions. 2-D growth is obtained when the GaN is grown on top of a low temperature GaN nucleation layer. Our results indicate that surface and interface energies, in addition to, lattice matching and thermal matching play an important role in determining the heteroexpitaxial growth morphology of GaN. There appears to be no net reduction in the dislocation density for GaN films grown on the Sc layers, because the GaN film has to be grown on a low temperature nucleation layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 347
Copyright
Copyright © Materials Research Society 1997

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